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SPI Silicon Nitride Membrane Window™ Grids

High temperature annealing experiments


Annealing experiments of silver thin film deposited directly onto the silicon nitridge membrane windows of SPI Silicon Nitride Membrane Window Grids as a function of temperature of annealing. Figure 1: As deposited; Figure 2: 100° C; Figure 3: 200°C, and Figure 4: 300°C. Taken from paper: In-situ TEM observations of abnormal grain growth, coarsening, and substrate de-wetting in nanocrystalline Ag thin films.


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Sunday July 06, 2008
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