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Remember that if your application is to remove "material" as opposed to atomic or molecular layers of adsorbed contamination, then you probably would require an "etcher" and not a "cleaner". Generally speaking, an etcher, sometimes called a plasma reactor, operates at 100 watts or higher, and a "cleaner" operates at 50 watts or lower, in some instances as low as 10 watts. The higher power of the etcher is usually required to move "material" such as photoresist residue on a wafer but a plasma cleaner is more appropriate for the removal of surface sorbed contamination from a fragile TEM specimen. There is of course some overlap and some instances where either system can be used, so keep in mind that the information just given is more of a "rule of thumb" and should you have any further questions about appropriateness or application, just ask!
Check out our list of Spare Parts List for SPI Plasma Prep™ II and Plasma Prep™ III.