Silicon Dioxide ultrathin film TEM grids offer high resolution imaging of prepared samples. Nanometer thick films
have minimal electronic interference and provide lower background signal than comparable carbon grids. This allows
clearer resolution of imaged samples. Additionally, the films are robust enough to withstand repeated plasma cleanings,
harsh deposition and chemical conditions, and high temperatures (tolerates temperatures to 1000°C). Surprisingly strong for their thinness, silicon dioxide
TEM grids provide a highly favorable balance between resolution and robustness. Also offers the ability to analyze for nitrogen by EDX techniques. Our oxide films
are pure stochiometric SiO2, as they are prepared by sputtering from a high quality SiO2 target in a dilute oxygen ambient.
Silicon Dioxide ultrathin film TEM window grids are available in film thicknesses of 20 nm and 40 nm. All films
are highly uniform in thickness, maintaining imaging resolution throughout the film area. The 20 nm TEM window grids allow for
high resolution imaging of prepared samples. The 40 nm grids are a more robust platform for high quality imaging.
Two thickness to choose from: 20 nm and 40 nm